dated : 27/12/2007 BC327?bc328 pnp silicon epitaxial planar transistor for switching and amplifier applications these types are subdivided into three groups -16, -25 and -40, according to their dc current gain. absolute maximum ratings (t a = 25 o c) parameter symbol BC327 bc328 unit collector base voltage -v cbo 50 30 v collector emitter voltage -v ceo 45 25 v emitter base voltage -v ebo 5 v collector current -i c 800 ma peak collector current -i cm 1 a total power dissipation p tot 625 mw junction temperature t j 150 o c storage temperature range t s - 55 to + 150 o c characteristics at t a = 25 o c parameter symbol min. typ. max. unit dc current gain at -v ce = 1 v, -i c = 100 ma current gain group at -v ce = 1 v, -i c = 300 ma -16 -25 -40 -16 -25 -40 h fe h fe h fe h fe h fe h fe 100 160 250 60 100 170 - - - - - - 250 400 630 - - - - - - - - - collector base cutoff current at -v cb = 45 v at -v cb = 25 v BC327 bc328 -i cbo - - - - 100 100 na collector base breakdown voltage at -i c = 100 a BC327 bc328 -v (br)cbo 50 30 - - - - v collector emitter breakdown voltage at -i c = 10 ma BC327 bc328 -v (br)ceo 45 25 - - - - v emitter base breakdown voltage at -i e = 100 a -v (br)ebo 5 - - v collector emitter saturation voltage at -i c = 500 ma, -i b = 50 ma -v ce(sat) - - 0.7 v base emitter on voltage at -v ce = 1 v, -i c = 300 ma -v be(on) - - 1.2 v gain bandwidth product at -v ce = 5 v, -i c = 10 ma, f = 50 mhz f t - 100 - mhz collector base capacitance at -v cb = 10 v, f = 1 mhz c cbo - 12 - pf 1. collector 2. base 3. emitter to-92 plastic package
dated : 27/12/2007 BC327?bc328
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